? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 26n50 23 a 24n50 21 a i dm t c = 25 c, pulse width limited by t jm 26n50 92 a 24n50 84 a i ar t c = 25 c 26n50 26 a 24n50 24 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 230 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 minute leads-to-tab 2500 v~ weight 3 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250ua 500 v v gs(th) v ds = v gs , i d = 4ma 2 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c 200 a v gs = 0 v t j = 125 c 1 ma r ds(on) v gs = 10 v, i d = i t 26n50 0.20 ? notes 1 & 2 24n50 0.23 ? features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low drain to tab capacitance(<35pf) low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control advantages easy assembly: no screws, or isolation foils required space savings high power density low collector capacitance to ground (low emi) g = gate d = drain s = source * patent pending isolated back surface* v dss i d25 r ds(on) ixfc 26n50 500 v 23 a 0.20 ? ? ? ? ? ixfc 24n50 500 v 21 a 0.23 ? ? ? ? ? t rr 250 ns hiperfet tm mosfets isoplus220 tm electrically isolated back surface n-channel enhancement mode high dv/dt, low t rr , hdmos tm family isoplus 220 tm 98755 (10/00) s g d advance technical information
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = i t note 1 11 21 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 450 pf c rss 135 pf t d(on) 16 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 33 ns t d(off) r g = 1 ? (external), 65 ns t f 30 ns q g(on) 135 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 28 nc q gd 62 nc r thjc 0.54 k/w r thck 0.30 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive; pulse width limited by t jm 104 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr t j = 25 c 250 ns t j = 125 c 400 ns q rm t j = 25 c1 1 c t j = 125 c2 c i rm t j = 25 c10 a t j = 125 c15 a i f = i s , -di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % 2. i t test current: ixfc26n50 i t = 13a IXFC24N50 i t = 12a 3. see ixfh26n50 data sheet for characteristic curves. ixfc 26n50 ixfc 24n50 isoplus220 outline note: all terminals are solder plated. 1 - gate 2 - drain 3 - source
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